Awards

A Circuit-design Friendly Light Intensity-dependent Conductance Tuning Approach using Floating Gate Optoelectronic Synapse with 2D Material

Monolithic three-dimensional integration of complementary two-dimensional field effect transistors

"AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm"

Negative Differential Resistance Regime of Field Emitter Arrays

Out-of-plane Polarized Spin Current Generation for Field-free Switching of Perpendicular SOT-MRAM

"AlN/Al0.25Ga0.75N/AlN Quantum Well HEMTs with fT/fmax of 67/166 GHz"

"Normally-off Quasi-vertical GaN FinFET on SiC Substrate with Record Small-signal Current Gain of ft = 10.2 GHz"

“Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure”
(Advisor: Peide Ye)

“Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure”
(Advisor: Peide Ye)

"Tunnel Junction-Enabled High-Efficiency Multi-Active Region III-Nitride Light Emitting Diodes"
(Advisor: Peide Ye)

"Sub-Nanosecond Partial Reset for Analog Phase Change Neuromorphic Devices"
(Advisor: Eilam Yalon)

“Analysis of Single Electron Traps in Nano-Scaled MoS2 FETs at Cryogenic Temperatures”
(Advisors: Tibor Grasser, TU Wien; Joerg Appenzeller, Purdue University)

“Capping Layers to Improve the Electrical Stress Stability of MoS2 Transistors”
(Advisor: Aaron Franklin)

"Gigahertz Zinc-Oxide TFT-Based Oscillators"
(Advisors: James C. Sturm, Naveen Verma and Sigurd Wagner)

“Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes”
(Advisors: Debdeep Jena and Huili (Grace) Xing)

“Domain Formation in Ferroelectric Negative Capacitance Devices”
(Advisor: Thomas Mikolajick)

“Low Power Nanoscale Switching of VO2using Carbon Nanotube Heaters”
(Advisor: Eric Pop)

"Wide-bandgap Gallium Nitride p-channel MISFETs with enhanced performance at high temperature"
(Advisors: Debdeep Jena and Huili (Grace) Xing)

"Edge contacts to multilayer MoS2 using in situ Ar ion beam"
(Advisor: Aaron Franklin)

“Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures”
(Advisors: Sanjay Banerjee and Emanuel Tutuc)

“Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements”
(Advisor: Eric Pop)

“InAlN/GaN MOSHEMTs with high drain current of 2.3 A/mm high on/off ratio of 1012 and low SS of 64 mV/dec enabled by atomic-layer-epitaxial MgCaO as gate dielectric”
(Advisor: Peide Ye)

“Top-gated WSe2 field-effect transistors with Pt contacts”
(Advisor: Sanjay Banerjee)

"In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V"
(Advisor: Erik Lind)

"Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization"
(Advisor: Marc Heyns)

(Advisor: Seth Bank)

(Advisor: Pallab Bhatacharya)