Young Professionals Workshop

Extreme Scaling of Transistor Technology based on 2D Semiconductors

Xu Zhang

Department of Electrical and Computer Engineering, Carnegie Mellon University

The atomically thin body thickness of two-dimensional (2D) semiconductors, especially 2D transition metal dichalcogenides (TMDCs), makes them ideal for ultimate scaling while maintaining a tight gate electrostatic control over channel. Unlike silicon, the dangling-bond-free nature of 2D semiconductors makes their carriers’ mobility largely immune to thickness scaling. It holds great prospects in enabling scaling electronic devices, for both computing and memory applications, down to a territory that would be fundamentally challenging for conventional 3D semiconductors, such as silicon and germanium. In this talk, we will share recent advances on the scalable fabrication of MoS₂ electronics devices with sub-5-nm channel length. A combined experimental and theoretical investigation was done to systematically study their quantum transport behavior, benchmarked against the state-of-the-art transistor technologies.

Field-Effect Transistors at the Edge: GaN Devices for Extreme Environments

Savannah Eisner

Department of Electrical Engineering, Columbia University\

Emerging applications in space exploration, nuclear energy, and advanced medical technologies are pushing electronic systems to their limits in terms of temperature, radiation, and reliability. This talk highlights recent and ongoing efforts in developing GaN-based high electron mobility transistors (HEMTs) for extreme environments. I will discuss our work on high-temperature InAlN/GaN platforms, initial testing under simulated Venus surface conditions, and emerging architectures for radiation-tolerant sensing — including potential applications in real-time monitoring for FLASH radiotherapy and harsh nuclear environments. These developments illustrate how field-effect transistors remain a foundational technology, even as we expand their use far beyond traditional domains.

Novel Nanoelectronics for Emerging Memory Technology 

Sourav Dutta

 Department of Electrical and Engineering, University of Texas at Dallas

With SRAM and DRAM technologies facing scaling challenges, emerging materials and devices involving ferroelectrics and amorphous oxide semiconductors are gaining attraction for next generation memory technology designs. These novel materials and devices however come with new physics and phenomena at the atomic scale that needs to be understood in order to address some of the reliability challenges. This talk will delve into understanding the reliability challenges, connecting them to different physics at the materials and device level, and help us solidify our understanding of these new materials and devices for memory applications.