Extreme Scaling of Transistor Technology based on 2D Semiconductors
Xu Zhang
Department of Electrical and Computer Engineering, Carnegie Mellon University
The atomically thin body thickness of two-dimensional (2D) semiconductors, especially 2D transition metal dichalcogenides (TMDCs), makes them ideal for ultimate scaling while maintaining a tight gate electrostatic control over channel. Unlike silicon, the dangling-bond-free nature of 2D semiconductors makes their carriers’ mobility largely immune to thickness scaling. It holds great prospects in enabling scaling electronic devices, for both computing and memory applications, down to a territory that would be fundamentally challenging for conventional 3D semiconductors, such as silicon and germanium. In this talk, we will share recent advances on the scalable fabrication of MoS2 electronics devices with sub-5-nm channel length. A combined experimental and theoretical investigation was done to systematically study their quantum transport behavior, benchmarked against the state-of-the-art transistor technologies.
Modeling of Distortion Behavior of GaN-based HEMTs for High-Frequency IC Design
Kexin “Kathy” Li
School of Electrical, Computer, and Energy Engineering, Arizona State University
The accurate modeling of distortion behavior in GaN-based High Electron Mobility Transistors (HEMTs) is crucial for the design of high-frequency integrated circuits (ICs). This talk focuses on characterizing and modeling nonlinear distortion effects in GaN HEMTs, especially their impact on circuit performance at microwave and millimeter-wave frequencies. We will discuss key mechanisms driving distortion, modeling approaches, and practical implications for linearity optimization in high-frequency IC design. Insights from this study contribute to developing more efficient and high-performance GaN-based RF and microwave systems.
Novel Nanoelectronics for Emerging Memory Technology
Sourav Dutta
Department of Electrical and Engineering, University of Texas at Dallas
With SRAM and DRAM technologies facing scaling challenges, emerging materials and devices involving ferroelectrics and amorphous oxide semiconductors are gaining attraction for next generation memory technology designs. These novel materials and devices however come with new physics and phenomena at the atomic scale that needs to be understood in order to address some of the reliability challenges. This talk will delve into understanding the reliability challenges, connecting them to different physics at the materials and device level, and help us solidify our understanding of these new materials and devices for memory applications.
Dr. Yuxuan Cosmi Lin, Assistant Professor
Department of Materials Science & Engineering
Texas A&M University
Dr. Xu Zhang, Assistant Professor
Department of Electrical and Computer Engineering
Carnegie Mellon University
Dr. Kexin “Kathy” Li, Assistant Professor
School of Electrical, Computer, and Energy Engineering
Arizona State University
Dr. Sourav Dutta, Assistant Professor
Department of Electrical and Computer Engineering
University of Texas at Dallas
Dr. Eli Yablonovitch, Professor
Department of Electrical Engineering and Computer Sciences
University of California, Berkeley
Dr. Greg Pitner, Manager
Corporate Research
Taiwan Semiconductor Manufacturing Company (TSMC)
Dr. Chad Husko, Founder & CEO
Iris Light Technologies
